Dielectric and microstructural behaviour of strontium titanate borosilicate glass ceramic system
نویسندگان
چکیده
منابع مشابه
Dielectric and pyroelectric properties of barium strontium titanate films on orthorhombic substrates with „110... / / „100... epitaxy
The role of anisotropic misfit strains on the spontaneous polarization, dielectric properties, and pyroelectric response of 110 oriented Ba0.6Sr0.4TiO3 BST 60/40 thin films on 100 orthorhombic substrates is analyzed theoretically. The anisotropic in-plane strain state and the rotation of the elastic and the electrostrictive constants of the BST 60/40 films result in strongly directional and uni...
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Persistent photoconductivity was observed in strontium titanate (SrTiO(3)) single crystals. When exposed to sub-bandgap light (2.9 eV or higher) at room temperature, the free-electron concentration increases by over 2 orders of magnitude. After the light is turned off, the enhanced conductivity persists for several days, with negligible decay. From positron lifetime measurements, the persistent...
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Strontium Titanate SrTiO3 (STO) is known to undergo an antiferrodistortive transition from cubic to tetragonal phase at Tc ≈ 105K, and classical to quantum paraelectric phase transition at Tq ≈ 37K. This paper is intended to use Landau Theory to explore these two phase transitions of STO, as well as some experimental techniques to examine this model.
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The dielectric permittivity, dielectric quality factor ~inverse dielectric loss!, and lattice parameter of 140 nm sputtered SrTiO3 films were dependent on the oxygen partial pressure and total chamber pressure (O21Ar) during film growth. Films were grown at 25 and 75 mTorr ~mT! in an oxygen rich and oxygen deficient sputtering gas environment concurrently on ~100! SrTiO3 and ~111! Pt/~0001! Al2...
متن کاملThe effect of stress on the dielectric properties of barium strontium titanate thin films
Barium strontium titanate thin films are being developed as capacitors in dynamic random access memories. These films, grown on silicon substrates, are under tensile residual stress. By a converse electrostrictive effect, the in-plane tensile stress reduces the capacitance in the thickness direction of the film. We measured the substrate curvature change upon the removal of the film, and found ...
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ژورنال
عنوان ژورنال: Bulletin of Materials Science
سال: 1995
ISSN: 0250-4707,0973-7669
DOI: 10.1007/bf02744843